PDF NTMS4503N Data sheet ( Hoja de datos )

Número de pieza	NTMS4503N
Descripción	Power MOSFET ( Transistor )
Fabricantes	ON Semiconductor
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No Preview Available ! NTMS4503N www.DataSheet4U.com Power MOSFET 28 V, 14 A, N−Channel, SO−8 Features • Low RDS(on) • High Power and Current Handling Capability • Low Gate Charge Applications • DC/DC Converters • Motor Drives • Synchronous Rectifier − POL • Buck Low−Side MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current Continuous @ Ta = 25°C (Note 1) Continuous @ Ta = 25°C (Note 2) Continuous @ Ta = 25°C (Note 3) Single Pulse (tp = 10 ms) Total Power Dissipation TA = 25°C (Note 1) TA = 25°C (Note 2) TA = 25°C (Note 3) Operating and Storage Temperature VDSS VGS ID IDM PD TJ, Tstg 28 $20 14 12 9.0 40 2.5 1.66 0.93 −55 to 150 V V A W °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 V, VGS = 10 V, IL = 12.2 A, L = 1.0 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds EAS 75 mJ TL 260 °C THERMAL RESISTANCE RATINGS Rating Symbol Value Unit Thermal Resistance Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Junction−to−Ambient (Note 3) RqJA °C/W 50 75 135 1. Surface−mounted on FR4 board using minimum recommended pad size (Cu area 0.412 in2), t < 10 s. 2. Surface−mounted on FR4 board using 1″ pad size (Cu area 1.127 in2) steady state. 3. Surface−mounted on FR4 board using minimum recommended pad size (Cu area 0.412 in2), steady state. http://onsemi.com V(BR)DSS 28 V RDS(on) TYP 7.0 mW @ 10 V 8.8 mW @ 4.5 V ID MAX (Note 1) 14 A D G S MARKING DIAGRAM/ PIN ASSIGNMENT 8 1 SO−8 CASE 751 STYLE 12 1 Source Source 8 Drain Drain Source Gate Drain Drain (Top View) 4503N = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week ORDERING INFORMATION Device Package Shipping† NTMS4503NR2 SO−8 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2003 November, 2003 − Rev. 0 1 Publication Order Number: NTMS4503N/D 1 page NTMS4503N PACKAGE DIMENSIONS www.DataSheet4U.com SO−8 CASE 751−07 ISSUE AA −X− A B −Y− −Z− H 85 S 0.25 (0.010) M Y M 1 4 K G D C SEATING PLANE N X 45 _ 0.10 (0.004) M 0.25 (0.010) M Z Y S X S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.80 5.00 0.189 0.197 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.053 0.069 D 0.33 0.51 0.013 0.020 G 1.27 BSC 0.050 BSC H 0.10 0.25 0.004 0.010 J J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 M 0_ 8_ 0_ 8_ N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN http://onsemi.com 5 5 Page

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