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Número de pieza | LET9150 | |
Descripción | RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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LET9150
RF power transistor from the LdmoST family
of n-channel enhancement-mode lateral MOSFETs
Preliminary data
Features
■ Excellent thermal stability
■ Common source configuration push-pull
■ POUT = 150 W with 18 dB gain @ 860 MHz
■ BeO-free package
Description
The LET9150 is a common source n-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to 2
GHz.
M246
Epoxy sealed
Figure 1. Pin connection
12
1-2 Drain
4-5 Gate
5
4
3 Source
Table 1.
Device summary
Order code
LET9150
Package
M246
Branding
LET9150
October 2009
Doc ID 16369 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/7
www.st.com
7
1 page LET9150
Packagewmwwec.DhaatanSicheael td4Ua.tcaom
Table 6.
Dim.
A
B
C
D
E
F
G
H
I
J
K
L
M246 (0.230 x 0.650 WIDE 4/L BAL N/HERM W/FLG) mechanical data
mm.
Inch
Min Typ Max Min Typ Max
5.33
5.59 0.210
0.220
6.48
6.73 0.255
0.265
17.27
18.29
0.680
0.720
5.72
5.97 0.225
0.235
22.86
.900
28.83
29.08
1.135
1.145
16.26
16.76
0.640
0.660
4.19
5.08 0.165
0.200
0.08
0.15 0.003
0.006
1.83
2.24 0.072
0.088
1.40
1.65 0.055
0.065
3.18
3.43 0.125
0.135
Figure 2. Package dimensions
Controlling dimension: Inches
Ref. 7145054A
Doc ID 16369 Rev 1
5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet LET9150.PDF ] |
Número de pieza | Descripción | Fabricantes |
LET9150 | RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs | ST Microelectronics |
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