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PDF LET9150 Data sheet ( Hoja de datos )

Número de pieza LET9150
Descripción RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! LET9150 Hoja de datos, Descripción, Manual

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LET9150
RF power transistor from the LdmoST family
of n-channel enhancement-mode lateral MOSFETs
Preliminary data
Features
Excellent thermal stability
Common source configuration push-pull
POUT = 150 W with 18 dB gain @ 860 MHz
BeO-free package
Description
The LET9150 is a common source n-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to 2
GHz.
M246
Epoxy sealed
Figure 1. Pin connection
12
1-2 Drain
4-5 Gate
5
4
3 Source
Table 1.
Device summary
Order code
LET9150
Package
M246
Branding
LET9150
October 2009
Doc ID 16369 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/7
www.st.com
7

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LET9150 pdf
LET9150
Packagewmwwec.DhaatanSicheael td4Ua.tcaom
Table 6.
Dim.
A
B
C
D
E
F
G
H
I
J
K
L
M246 (0.230 x 0.650 WIDE 4/L BAL N/HERM W/FLG) mechanical data
mm.
Inch
Min Typ Max Min Typ Max
5.33
5.59 0.210
0.220
6.48
6.73 0.255
0.265
17.27
18.29
0.680
0.720
5.72
5.97 0.225
0.235
22.86
.900
28.83
29.08
1.135
1.145
16.26
16.76
0.640
0.660
4.19
5.08 0.165
0.200
0.08
0.15 0.003
0.006
1.83
2.24 0.072
0.088
1.40
1.65 0.055
0.065
3.18
3.43 0.125
0.135
Figure 2. Package dimensions
Controlling dimension: Inches
Ref. 7145054A
Doc ID 16369 Rev 1
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