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PDF CGR-0218Z Data sheet ( Hoja de datos )
| Número de pieza | CGR-0218Z | |
| Descripción | PUSH-PULL 5MHz to 210MHz HIGH LINEARITY InGaP HBT AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
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CGR-0218Z
Push-Pull
5MHz to
210 MHz High
Linearity
CGR-0218Z
InGaP HBT
Amplifier www.DataSheet4U.com
PUSH-PULL 5MHz to 210MHz HIGH
LINEARITY InGaP HBT AMPLIFIER
Package: SOIC-8
Product Description
RFMD’s CGR-0218Z is a high performance InGaP HBT MMIC Amplifier designed
with the InGaP process technology for excellent reliability. A Darlington configura-
tion is utilized for broadband performance. The heterojunction increases break-
down voltage and minimizes leakage current between junctions. The CGR-0218Z
contains two amplifiers for use in wideband push-pull CATV amplifiers requiring
excellent second order performance. The second and third order non-linearities are
greatly improved in the push-pull configuration.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Amplifier Configuration
18
27
36
45
Features
5V Single Supply
Excellent Linearity
Two Amplifiers in Each SOIC-8
Package Simplify Push-Pull
PC Board Layout
SOIC-8 Package
Available in Lead-Free, RoHS
Compliant Packaging
Applications
CATV Head Ends
CATV Line Drivers
DOCSIS Cable Modems
Parameter
Small Signal Gain
Gain Flatness
OIP3
Specification
Min. Typ. Max.
17.3
±0.2
42
Unit
dB
dB
dBm
P1dB
23 dBm
Input Return Loss
Output Return Loss
Noise Figure, Balun Insertion Loss
Included
CSO
22
22
4.0
80
dB
dB
dB
dBc
CTB 67 dBc
XMOD
66 dBc
Device Operating Voltage
Device Operating Current
5.0 V
217 mA
Thermal Resistance (Junction to
Lead)
30 °C/W
Test Conditions: VCC=5V, ID=217mA Typ., TL=25°C, ZS=ZL=75, Push Pull Application Circuit
Condition
5MHz to 210MHz
5MHz to 210MHz
5MHz to 210MHz, Tone Spacing=1MHz, POUT per
tone = +6 dBm
5MHz to 210MHz
5MHz to 210MHz
5MHz to 210MHz
5MHz to 210MHz
7 Ch, Flat Tilt, +50dBmV
7 Ch, Flat Tilt, +50dBmV
7 Ch, Flat Tilt, +50dBmV
5V VCC
Junction to case slug
DS091015
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 8
1 page  
CGR-0218Z
www.DataSheet4U.com
Pin
1
2, 3,
6, 7
4
5
8
EPAD
Function
RF IN
GND
Description
RF input pin. External DC blocking capacitor is required.
Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as
possible.
RF IN
RF OUT/VCC
RF OUT/VCC
GND
Same as pin 1.
RF output and bias pin (open collector).
Same as pin 5.
Exposed area on the bottom side of the package must be soldered to the ground plane of the board for optimum
thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended
land pattern.
Pin Out
Amplifier Configuration
18
27
36
45
DS091015
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 8
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet CGR-0218Z.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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