DataSheet.es    


PDF TIM5964-60SL Data sheet ( Hoja de datos )

Número de pieza TIM5964-60SL
Descripción MICROWAVE POWER GaAs FET
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de TIM5964-60SL (archivo pdf) en la parte inferior de esta página.


Total 4 Páginas

No Preview Available ! TIM5964-60SL Hoja de datos, Descripción, Manual

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWERwGwwa.ADastaFShEeTet4U.com
TIM5964-60SL
FEATURES
T LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 36.5dBm
Single Carrier Level
T HIGH POWER
P1dB=48.0dBm at 5.9GHz to 6.4GHz
T HIGH GAIN
G1dB=8.5dB at 5.9GHz to 6.4GHz
T BROAD BAND INTERNALLY MATCHED FET
T HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS
Output Power at 1dB Gain P1dB
Compression Point
Power Gain at 1dB Gain
G1dB
VDS=10V
Compression Point
f = 5.9 to 6.4GHz
Drain Current
IDS1
IDSset=9.5A
Gain Flatness
Power Added Efficiency
G
ηadd
3rd Order Intermodulation
IM3
Two-Tone Test
Distortion
Po=36.5dBm
Drain Current
IDS2
(Single Carrier Level)
Channel Temperature Rise Tch VDS X IDS X Rth(c-c)
Recommended Gate Resistance(Rg) : 28 (Max.)
UNIT
dBm
dB
A
dB
%
dBc
A
°C
MIN.
47.0
7.5
-42
TYP. MAX.
48.0
8.5
13.2
41
-45
15.0
±0.8
11.8
100
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
gm
VGSoff
IDSS
VGSO
CONDITIONS
VDS= 3V
IDS= 12.0A
VDS= 3V
IDS= 200mA
VDS= 3V
VGS= 0V
IGS= -1.0mA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S 20
V -1.0 -1.8 -3.0
A 38
V -5  
°C/W 0.6 0.8
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Aug. 2003

1 page





PáginasTotal 4 Páginas
PDF Descargar[ Datasheet TIM5964-60SL.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
TIM5964-60SLMICROWAVE POWER GaAs FETToshiba Semiconductor
Toshiba Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar