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Numéro de référence | TIM5964-25UL | ||
Description | MICROWAVE POWER GaAs FET | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
1 Page
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWERwGwwa.ADastaFShEeTet4U.com
TIM5964-25UL
FEATURES
HIGH POWER
BROAD BAND INTERNALLY MATCHED FET
P1dB=44.5dBm at 5.9GHz to 6.4GHz
HIGH GAIN
HERMETICALLY SEALED PACKAGE
G1dB=10.0dB at 5.9GHz to 6.4GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS
UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point
P1dB
dBm 43.5 44.5 ⎯
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
G1dB
IDS1
ΔG
ηadd
VDS= 10V
f = 5.9 to 6.4GHz
dB 9.0 10.0 ⎯
A ⎯ 6.8 7.6
dB ⎯ ⎯ ±0.6
% ⎯ 37 ⎯
3rd Order Intermodulation
IM3
Two-Tone Test
dBc -44 -47 ⎯
Distortion
Po=33.5dBm
Drain Current
IDS2
(Single Carrier Level)
Channel Temperature Rise
ΔTch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 28 Ω(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
A
°C
⎯ 6.8 7.6
⎯ ⎯ 80
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
SYMBOL
CONDITIONS
gm VDS= 3V
IDS= 8.0A
VGSoff VDS= 3V
IDS= 80mA
IDSS VDS= 3V
VGS= 0V
VGSO IGS= -280μA
UNIT MIN. TYP. MAX.
mS ⎯ 5000 ⎯
V -1.0 -2.5 -4.0
A ⎯ 14.4 ⎯
V -5 ⎯ ⎯
Thermal Resistance
Rth(c-c) Channel to Case
°C/W ⎯ 1.2 1.5
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jun. 2006
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Pages | Pages 4 | ||
Télécharger | [ TIM5964-25UL ] |
No | Description détaillée | Fabricant |
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