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JDH3D01FV fiches techniques PDF

Toshiba Semiconductor - Diode Silicon Epitaxial Schottky Barrier Type

Numéro de référence JDH3D01FV
Description Diode Silicon Epitaxial Schottky Barrier Type
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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JDH3D01FV fiche technique
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH3D01FV
JDH3D01FV
For wave detection
¾ Small package
1.2±0.05
0.8±0.05
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
Forward current
Junction temperature
Storage temperature range
VR 4 V
IF 25 mA
Tj 125 °C
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
1
23
VESM
1. ANODE1
2. CATHODE2
3. CATHODE1/ANODE2
JEDEC
JEITA
TOSHIBA
1-2S1C
Weight:0.0015g(typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Forward voltage
Forward current
Reverse current
Capacitance
VF IF = 2 mA
IF VF = 0.5 V
IR VR = 0.5 V
CT VR = 0.2 V, f = 1 MHz
Note: Signal level when capacitance is measured: Vsig = 20 mVrms
Marking
Min
25
Typ. Max
0.25 ⎯
⎯⎯
⎯ 25
0.6
Unit
V
mA
uA
pF
BH
Caution
This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and
other objects that come into direct contact with the product should be made of antistatic materials.
1 2007-11-01

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