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Renesas Technology - Silicon N Channel IGBT

Numéro de référence RJH60F0DPK
Description Silicon N Channel IGBT
Fabricant Renesas Technology 
Logo Renesas Technology 





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RJH60F0DPK fiche technique
RJH60F0DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
High speed switching
Low on-state voltage
Fast recovery diode
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
12 3
G
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100°C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 μs, duty cycle 1%
3. Value at Tc = 25°C
Symbol
VCES
VGES
IC Note1
IC Note1
ic(peak) Note1
iDF(peak) Note2
PC Note3
Tj
Tstg
Preliminary
www.DataSheet4U.com
REJ03G1834-0100
Rev.1.00
Oct 13, 2009
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
Ratings
600
±30
50
25
100
100
201.6
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C
°C
REJ03G1834-0100 Rev.1.00 Oct 13, 2009
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