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RJH60D7DPK fiches techniques PDF

Renesas Technology - IGBT

Numéro de référence RJH60D7DPK
Description IGBT
Fabricant Renesas Technology 
Logo Renesas Technology 





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RJH60D7DPK fiche technique
Preliminary Datasheet
RJH60D7DPK
600V - 50A - IGBT
Application: Inverter
R07DS0165EJ0400
Rev.4.00
Apr 19, 2012
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
12 3
1. Gate
G
2. Collector
3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
90
50
200
30
120
300
0.42
2.1
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0165EJ0400 Rev.4.00
Apr 19, 2012
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