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Renesas Technology - Silicon N Channel IGBT

Numéro de référence RJH60D1DPE
Description Silicon N Channel IGBT
Fabricant Renesas Technology 
Logo Renesas Technology 





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RJH60D1DPE fiche technique
RJH60D1DPE
Silicon N Channel IGBT
Application: Inverter
Features
High breakdown-voltage
Low on-voltage
Built-in diode
Outline
Preliminary
www.DataSheet4U.com
REJ03G1840-0100
Rev.1.00
Oct 14, 2009
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
C
123
1. Gate
2. Collector
G 3. Emitter
4. Collecotor
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to Emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW 10 μs, duty cycle 1%
2. Value at Tc = 25°C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
θj-c Note2
Tj
Tstg
Ratings
600
±30
16
8
32
8
32
70
1.79
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C
°C
REJ03G1840-0100 Rev.1.00 Oct 14, 2009
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