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PDF VND5E160MJ-E Data sheet ( Hoja de datos )
| Número de pieza | VND5E160MJ-E | |
| Descripción | Double-channel high-side driver | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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VND5E160MJ-E
Double-channel high-side driver with analog current sense
for automotive applications
Features
Max transient supply voltage VCC 41 V
Operating voltage range
VCC 4.5 V to 28 V
Max on-state resistance (per ch.) RON 160 mΩ
Current limitation (typ.)
Off-state supply current
ILIMH
IS
10 A
2 µA(1)
1. Typical value with all loads connected.
■ General
– Inrush current active management by
power limitation
– Very low standby current
– 3 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
www.DataShee–t4UH.ciogmh-precision current sense for wide
currents range
– Current sense disable
– Overload and short to ground (power
limitation) indication
– Thermal shutdown indication
■ Protections
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of VCC
– Overtemperature shutdown with auto
restart (thermal shutdown)
– Reverse battery protected (see Figure 29)
PowerSSO-12
– Electrostatic discharge protection
Application
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VND5E160MJ-E is a double-channel
high-side driver manufactured in the ST
proprietary VIPower™ M0-5 technology and
housed in the tiny PowerSSO-12 package. The
VND5E160MJ-E is designed to drive 12 V
automotive grounded loads delivering protection,
diagnostics and easy 3 V and 5 V CMOS
compatible interface with any microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with
auto-restart and overvoltage active clamp. A
dedicated analog current sense pin is associated
with every output channel in order to provide
enhanced diagnostic functions including fast
detection of overload and short-circuit to ground
through power limitation indication and
overtemperature indication.
The current sensing and diagnostic feedback of
the whole device can be disabled by pulling the
CS_DIS pin high to allow sharing of the external
sense resistor with other similar devices.
October 2009
Doc ID 15616 Rev 1
1/34
www.st.com
1
1 page  
VND5E160MJ-E
Block diagram and pin description
1 Block diagram and pin description
Figure 1. Block diagram
Signal Clamp
Undervoltage
IN1
IN2
Control & Diagnostic 1
Power
Clamp
DRIVER
Over
temp.
Current
Limitation
VON
Limitation
VCC
CH 1
CS_
DIS
CS1
CS2
LOGIC
VSENSEH
Current
Sense
OVERLOAD PROTECTION
(ACTIVE POWER LIMITATION)
GND
CH 2
OUT2
OUT1
Table 1. Pin function
Name
Function
www.DataSheet4U.com
VCC
OUTn
GND
INn
CSn
CS_DIS
Battery connection.
Power output.
Ground connection. Must be reverse battery protected by an external
diode/resistor network.
Voltage controlled input pin with hysteresis, CMOS compatible. Controls
output switch state.
Analog current sense pin, delivers a current proportional to the load current.
Active high CMOS compatible pin, to disable the current sense pin.
Doc ID 15616 Rev 1
5/34
5 Page 
VND5E160MJ-E
Electrical specifications
Table 9. Current sense (8 V < VCC < 18 V)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
www.DataSheet4U.com
K0 IOUT/ISENSE
IOUT = 0.025 A, VSENSE = 0.5 V,
VCSD = 0 V, Tj = -40 °C to 150 °C
270 520 730
K1 IOUT/ISENSE
IOUT = 0.35 A, VSENSE = 0.5 V,
VCSD = 0 V, Tj = -40 °C to 150 °C
IOUT = 0.35 A, VSENSE = 0.5 V,
VCSD = 0 V, Tj = 25 °C to 150 °C
345 470 610
370 470 540
dK1/K1(1)
Current sense ratio
drift
IOUT = 0.35 A; VSENSE = 0.5 V,
VCSD = 0 V, Tj = -40 °C to 150 °C
-13
13 %
K2 IOUT/ISENSE
IOUT = 0.5 A, VSENSE = 4 V, VCSD = 0 V, 370 460 550
Tj = -40 °C to 150 °C
IOUT = 0.5 A, VSENSE = 4 V, VCSD = 0 V, 390 460 510
Tj = 25 °C to 150 °C
dK2/K2(1)
Current sense ratio
drift
IOUT = 0.5 A, VSENSE = 4 V,
VCSD = 0 V,
Tj = -40 °C to 150 °C
-8 8 %
K3 IOUT/ISENSE
IOUT = 1.5 A, VSENSE = 4 V, VCSD = 0 V, 400 430 470
Tj = -40 °C to 150 °C
IOUT = 1.5 A, VSENSE = 4 V, VCSD = 0 V, 410 430 460
Tj = 25 °C to 150 °C
dK3/K3(1)
Current sense ratio
drift
IOUT = 1.5 A, VSENSE= 4 V,
VCSD = 0 V,
Tj = -40 °C to 150 °C
-4 4 %
IOUT = 0 A, VSENSE = 0 V, VCSD = 5 V,
VIN = 0 V, Tj = -40 °C to 150 °C
0
1
ISENSE0
Analog sense
leakage current
IOUT = 0 A, VSENSE = 0 V;, VCSD = 0 V,
VIN = 5 V, Tj = -40 °C to 150 °C
0
2 µA
IOUT = 0.6 A, VSENSE = 0 V; VCSD = 5 V,
VIN = 5 V, Tj = -40 °C to 150 °C
0
1
IOL
Open-load ON-state
current detection
VIN = 5 V, 8 V < VCC < 18 V
threshold
ISENSE = 5 µA
1 5 mA
VSENSE
Max analog sense
output voltage
IOUT = 1.5 A, VCSD = 0 V
5
V
Analog sense output
VSENSEH(2) voltage in fault
VCC = 13 V, RSENSE = 3.9 KΩ;
condition
8V
Analog sense output
ISENSEH(2) current in fault
VCC = 13 V, VSENSE = 5 V
condition
9 mA
Doc ID 15616 Rev 1
11/34
11 Page | ||
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