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2SC4758 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence 2SC4758
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC4758 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4758
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Horizontal deflection output for high resolution display.
·High speed switching power supply output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
i.cnCollector-Base Voltage
.iscsemCollector-Emitter Voltage
wwwEmitter-Base Voltage
VALUE UNIT
1500
V
600 V
5V
www.DataSheICet4U.comCollector Current- Continuous
8
A
ICP Collector Current-Pulse
16 A
IBB Base Current- Continuous
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
4A
50 W
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn

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