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PDF LET9120M Data sheet ( Hoja de datos )
| Número de pieza | LET9120M | |
| Descripción | LDMOS 28 V HF/VHF/UHF/900 MHz & Avionics Applications | |
| Fabricantes | ST Microelectronics | |
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LET9120M
RF power transistor from the LdmoST family
of n-channel enhancement-mode lateral MOSFETs
Preliminary data
Features
■ Excellent thermal stability
■ Common source configuration push-pull
■ POUT = 120 W with 18 dB gain @ 860 MHz
■ Internal input matching
■ BeO-free package
Description
The LET9120M is a common source n-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz.
M252
Epoxy sealed
Figure 1. Pin connection
12
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5
1. Drain
2. Drain
3. Source
3
4
4. Gate
5. Gate
Table 1.
Device summary
Order code
LET9120M
Package
M252
Branding
LET9120M
November 2009
Doc ID 16762 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/8
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8
1 page  
LET9120M
3 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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Doc ID 16762 Rev 1
5/8
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet LET9120M.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LET9120 | LDMOS 28 V HF/VHF/UHF/900 MHz & Avionics Applications | ST Microelectronics |
| LET9120M | LDMOS 28 V HF/VHF/UHF/900 MHz & Avionics Applications | ST Microelectronics |
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