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PDF NTD6416AN Data sheet ( Hoja de datos )
| Número de pieza | NTD6416AN | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
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NTD6416AN
N-Channel Power MOSFET
100 V, 17 A, 81 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
Current
Power Dissipation
Steady
State
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
VDSS
VGS
ID
PD
100
$20
17
11
71
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
IDM
TJ, Tstg
62
−55 to
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc,
IL(pk) = 17 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
IS 17
EAS 43
TL 260
Unit
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
www.DataSheet4U.com Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
RqJC
2.1 °C/W
Junction−to−Ambient (Note 1)
RqJA
40
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
http://onsemi.com
V(BR)DSS
100 V
RDS(on) MAX
81 mW @ 10 V
ID MAX
(Note 1)
17 A
N−Channel
D
G
4
12
3
DPAK
CASE 369AA
STYLE 2
S
4
1
2
3
IPAK
CASE 369D
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
4 Drain
1
Gate
2
Drain
3
Source
1
Gate
6416AN
Y
WW
G
= Device Code
= Year
= Work Week
= Pb−Free Package
2
Drain
3
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
November, 2009 − Rev. 0
1
Publication Order Number:
NTD6416AN/D
1 page  
NTD6416AN
TYPICAL CHARACTERISTICS
10
1 D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01 SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 13. Thermal Response
ORDERING INFORMATION
Device
Package
Shipping†
NTD6416ANT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD6416AN−1G
IPAK
(Pb−Free)
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
www.DataSheet4U.com
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NTD6416AN.PDF ] | |
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