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PDF NTD6416ANL Data sheet ( Hoja de datos )
| Número de pieza | NTD6416ANL | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTD6416ANL
N-Channel Power MOSFET
100 V, 19 A, 74 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
Current
Power Dissipation
Steady
State
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
VDSS
VGS
ID
PD
100
$20
19
13
71
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
IDM
TJ, Tstg
70
−55 to
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) =
18.2 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
IS
EAS
TL
19
50
260
Unit
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
www.DataSheet4U.com
Junction−to−Case (Drain) − Steady State
Symbol
RqJC
Max
2.1
Unit
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
47
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
http://onsemi.com
V(BR)DSS
100 V
RDS(on) MAX
74 mW @ 10 V
ID MAX
19 A
D
G
4
12
3
DPAK
CASE 369AA
STYLE 2
S
4
1
2
3
IPAK
CASE 369D
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
4 Drain
1
Gate
2
Drain
3
Source
1
Gate
6416ANL = Device Code
Y = Year
WW = Work Week
G = Pb−Free Package
2
Drain
3
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 0
1
Publication Order Number:
NTD6416ANL/D
1 page  
NTD6416ANL
1.0
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E-05
1.0E-04
P(pk)
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
DUTY
t2
CYCLE,
D
=
t1/t2
READ TIME
TJ(pk) − TC =
AT t1
P(pk)
RqJC(t)
1.0E-03
1.0E-02
t, TIME (ms)
Figure 13. Thermal Response
1.0E-01
1.0E+00
1.0E+01
ORDERING INFORMATION
Device
Package
Shipping†
NTD6416ANLT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD6416ANL−1G
IPAK
(Pb−Free)
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
www.DataSheet4U.com
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NTD6416ANL.PDF ] | |
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