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Numéro de référence | NTD12 | ||
Description | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | ||
Fabricant | EDI | ||
Logo | |||
1 Page
HIGH VOLTAGE-HIGH CURRENT
SILICON RECTIFIERS
NTD
DIFFUSED SILICON JUNCTIONS
PRV 8,000 TO 60,000 VOLTS
AVALANCHE CHARACTERISTICS
LOW LEAKAGE
EDI Type No.
NTD 08
NTD 10
NTD 12
NTD 15
NTD 20
NTD 25
NTD 30
NTD 35
NTD 40
www.DataSheNet4TUD.co4m5
NTD 50
NTD 60
Peak
Reverse V oltage
PRV (V olts)
8,000
10,000
12,000
15,000
20,000
25,000
30,000
35,000
40,000
45,000
50,000
60,000
Avg. Fwd.Current
at 50 o C
(mA)
300
300
300
300
300
300
300
300
300
300
300
300
Max. Fwd. Voltage
Drop at 25 oC And I O
V F(Volts)
12
15
18
24
30
38
45
54
60
70
76
83
Length L
Fig.3
1.00
1.25
1.50
2.00
2.50
3.00
3.75
4.00
5.00
6.25
6.25
8.00
ELECTRICAL CHARACTERISTICS(at TA =25 C Unless Otherwise Specified)
Max. DC Reverse Current @ PRV and 25 oC, IR
Max. DC Reverse Current @ PRV and 100 oC, IR
Ambient Operating Temperature Range,TA
Storage Temperature Range, TSTG
Max.One-Half Cycle Surge Current, IFM (Surge )@ 60Hz
1A
100 A
-55 oC to +125oC
-55 oC to +150oC
20 Amps
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Pages | Pages 2 | ||
Télécharger | [ NTD12 ] |
No | Description détaillée | Fabricant |
NTD10 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | EDI |
NTD106B | Thyristor/Diode Module | Naina Semiconductor |
NTD110N02R | Power MOSFET ( Transistor ) | ON |
NTD110N02RG | Power MOSFET ( Transistor ) | ON |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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