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FSQ10A04 fiches techniques PDF

Nihon Inter Electronics - Schottky Barrier Diode

Numéro de référence FSQ10A04
Description Schottky Barrier Diode
Fabricant Nihon Inter Electronics 
Logo Nihon Inter Electronics 





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FSQ10A04 fiche technique
S B D T y p e : FSQ10A04
FEATURES
*Similar to TO-220AC Case
*Fully Molded Isolation
*Low Forward Voltage Drop
*Low Power Loss,High Efficiency
*High Surge Capability
*Tj=150 °C operation
OULINE DRAWING
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Mounting torque
Symbol
VRRM
VRSM
IO
IF(RMS)
IFSM
Tjw
Tstg
Ftor
Approx Net Weight: 1.7g
FSQ10A04
40
45
10
Tc=119°C
50 Hz half Sine Wave
Resistive Load
15.7
180
50Hz Half Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
recommended torque = 0.5
Unit
V
V
A
A
A
°C
°C
Nm
Electrical Thermal Characteristics
Characteristics
wwPw.eDaaktaSRheeevt4eUr.scoemCurrent
Peak Forward Voltage
Thermal Resistance
Symbol
IRM
VFM
Rth(j-c)
Rth(c-f)
Conditions
Tj= 25°C, VRM= VRRM
Tj= 25°C, IFM= 10 A
Junction to Case
Cace to Fin
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
10
0.59
3
1.5
Unit
mA
V
°C /W
°C /W

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