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2N5401HR fiches techniques PDF

STMicroelectronics - Hi-Rel PNP bipolar transistor 150 V - 0.5 A

Numéro de référence 2N5401HR
Description Hi-Rel PNP bipolar transistor 150 V - 0.5 A
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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2N5401HR fiche technique
2N5401HR
Hi-Rel PNP bipolar transistor 150 V - 0.5 A
Features
BVCEO
IC (max)
HFE at 10 V - 150 mA
Operating temperature range
150 V
0.5 A
> 60
-65°C to +200°C
Hi-Rel PNP bipolar transistor
Linear gain characteristics
ESCC qualified
European preferred part list - EPPL
Radiation level: lot specific total dose contact
marketing for specified level
Description
The 2N5401HR is a silicon planar epitaxial PNP
transistor in TO-18 and LCC-3 packages. It is
specifically designed for aerospace Hi-Rel
applications and ESCC qualified according to the
5202-014 specification. In case of conflict
between this datasheet and ESCC detailed
www.DataSshpeeect4ifUic.caotmion, the latter prevails.
TO-18
1
2
3
3
2
LCC-3
1
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes Packages
Lead finish
2N5401HR
TO-18
Gold
Solder Dip
2N5401T1
TO-18
Gold
SOC5401
SOC5401HRB
LCC-3
LCC-3
Gold
Gold
Solder Dip
Marking
520201401
520201402
2N5401T1
SOC5401
520201404
520201405
Type
ESCC Flight
Engineering
model
Engineering
model
ESCC Flight
EPPL
Yes
Packaging
Strip pack
Strip pack
Waffle pack
Waffle pack
January 2010
Doc ID 16934 Rev 1
1/8
www.st.com
8

PagesPages 8
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