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NXP Semiconductors - 2A PNP High-voltage Low VCEsat (BISS) Transistor

Numéro de référence PBHV9215Z
Description 2A PNP High-voltage Low VCEsat (BISS) Transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBHV9215Z fiche technique
PBHV9215Z
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
Rev. 01 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8215Z.
1.2 Features
„ High voltage
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ AEC-Q101 qualified
„ Medium power SMD plastic package
1.3 Applications
„ LED driver for LED chain module
„ LCD backlighting
„ Automotive motor management
„ Switch Mode Power Supply (SMPS)
1.4 Quick reference data
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Table 1. Quick reference data
Symbol Parameter
VCEO
collector-emitter voltage
IC collector current
hFE DC current gain
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Conditions
open base
VCE = 10 V;
IC = 100 mA
Min Typ Max Unit
- - 150 V
- - 2 A
[1] 100 180 -

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