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Numéro de référence | PBHV9215Z | ||
Description | 2A PNP High-voltage Low VCEsat (BISS) Transistor | ||
Fabricant | NXP Semiconductors | ||
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1 Page
PBHV9215Z
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
Rev. 01 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8215Z.
1.2 Features
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
Medium power SMD plastic package
1.3 Applications
LED driver for LED chain module
LCD backlighting
Automotive motor management
Switch Mode Power Supply (SMPS)
1.4 Quick reference data
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Table 1. Quick reference data
Symbol Parameter
VCEO
collector-emitter voltage
IC collector current
hFE DC current gain
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Conditions
open base
VCE = −10 V;
IC = −100 mA
Min Typ Max Unit
- - −150 V
- - −2 A
[1] 100 180 -
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Pages | Pages 12 | ||
Télécharger | [ PBHV9215Z ] |
No | Description détaillée | Fabricant |
PBHV9215Z | 2A PNP High-voltage Low VCEsat (BISS) Transistor | NXP Semiconductors |
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