|
|
PDF FAG50 Data sheet ( Hoja de datos )
| Número de pieza | FAG50 | |
| Descripción | IRFAG50 | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FAG50 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
PD - 90582
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
THRU-HOLE (TO-204AA/AE)
IRFAG50
1000V, N-CHANNEL
Product Summary
Part Number BVDSS
IRFAG50
1000V
RDS(on)
2.0Ω
ID
5.6Α
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
www.DataSheet4U.com
Parameter
ID @ VGS = 0V, TC = 25°C Continuous Drain Current
ID @ VGS = 0V, TC = 100°C
IDM
Continuous Drain Current
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ Operating Junction
TSTG
Storage Temperature Range
Lead Temperature
Weight
Units
5.6
3.5 A
22
150 W
1.2 W/°C
±20 V
860 mJ
5.6 A
15 mJ
1.0 V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from case for 10s)
11.5(typical)
g
For footnotes refer to the last page
www.irf.com
1
01/24//01
1 page  
Fig 9. Maximum Drain Current Vs.
Case Temperature
www.DataSheet4U.com
IRFAG50
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FAG50.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FAG50 | IRFAG50 | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |