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Numéro de référence | SF16JZ51 | ||
Description | MEDIUM POWER CONTROL APPLICATIONS | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
1 Page
SF16GZ51,SF16JZ51
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF16GZ51,SF16JZ51
MEDIUM POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak Off−State Voltage : VDRM = 400,600V
Repetitive Peak Reverse Voltage : VRRM = 400,600V
l Average On−State Current
: IT (AV) = 16A
l Isolation Voltage
: VIsol = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak
Off−State Voltage and
Repetitive Peak
Reverse Voltage
SF16GZ51
SF16JZ51
Non−Repetitive Peak
Reverse Voltage
(Non−Repetitive <5ms,
Tj = 0~125°C)
SF16GZ51
SF16JZ51
Average On−State Current
(Half Sine Waveform)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non-Repetitive)
I2t Limit Value
Critical Rate of Rise of On−State
Curret
(Note)
Peak Gate Power Dissipation
www.DataShAeveetr4aUge.cGomate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
VDRM
VRRM
VRSM
IT(AV)
IT(RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VFGM
VRGM
IGM
Tj
Tstg
VIsol
400
600
500
720
16
25
250 (50Hz)
275 (60Hz)
312
100
5
0.5
10
−5
2
−40~125
−40~125
1500
V
V
A
A
A
A2s
A / µs
W
W
V
V
A
°C
°C
V
Note : di / dt Test Condition, iG = 30mA, tgw = 10µs, tgr ≤ 250ns
JEDEC
JEITA
TOSHIBA
Weight: 5.9g
―
―
13−16A1B
1 2001-07-13
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Pages | Pages 6 | ||
Télécharger | [ SF16JZ51 ] |
No | Description détaillée | Fabricant |
SF16JZ51 | MEDIUM POWER CONTROL APPLICATIONS | Toshiba Semiconductor |
SF16JZ51 | SILICON PLANAR TYPE THYRISTOR | Toshiba |
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