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Toshiba Semiconductor - MEDIUM POWER CONTROL APPLICATIONS

Numéro de référence SF16JZ51
Description MEDIUM POWER CONTROL APPLICATIONS
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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SF16JZ51 fiche technique
SF16GZ51,SF16JZ51
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF16GZ51,SF16JZ51
MEDIUM POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak OffState Voltage : VDRM = 400,600V
Repetitive Peak Reverse Voltage : VRRM = 400,600V
l Average OnState Current
: IT (AV) = 16A
l Isolation Voltage
: VIsol = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak
OffState Voltage and
Repetitive Peak
Reverse Voltage
SF16GZ51
SF16JZ51
NonRepetitive Peak
Reverse Voltage
(NonRepetitive <5ms,
Tj = 0~125°C)
SF16GZ51
SF16JZ51
Average OnState Current
(Half Sine Waveform)
R.M.S OnState Current
Peak One Cycle Surge OnState
Current (Non-Repetitive)
I2t Limit Value
Critical Rate of Rise of OnState
Curret
(Note)
Peak Gate Power Dissipation
www.DataShAeveetr4aUge.cGomate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
VDRM
VRRM
VRSM
IT(AV)
IT(RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VFGM
VRGM
IGM
Tj
Tstg
VIsol
400
600
500
720
16
25
250 (50Hz)
275 (60Hz)
312
100
5
0.5
10
5
2
40~125
40~125
1500
V
V
A
A
A
A2s
A / µs
W
W
V
V
A
°C
°C
V
Note : di / dt Test Condition, iG = 30mA, tgw = 10µs, tgr 250ns
JEDEC
JEITA
TOSHIBA
Weight: 5.9g
1316A1B
1 2001-07-13

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