DataSheetWiki


PE4250 fiches techniques PDF

Peregrine Semiconductor - SPDT High Isolation UltraCMOS? RF Switch

Numéro de référence PE4250
Description SPDT High Isolation UltraCMOS? RF Switch
Fabricant Peregrine Semiconductor 
Logo Peregrine Semiconductor 





1 Page

No Preview Available !





PE4250 fiche technique
Product Description
The PE4250 is a HaRP™-enhanced Reflective SPDT (single
pole double throw) RF Switch for use in general switching
applications and mobile infrastructure. This device offers a
flexible supply voltage of 3.3/5V, single-pin or complementary
pin control inputs, and 4000 V ESD tolerance. It presents a
simple alternative solution to pin diode and mechanical relay
switches.
Peregrine’s HaRP™ technology enhancements deliver high
linearity and exceptional performance. It is an innovative
feature of the UltraCMOS™ process, providing performance
superior to GaAs with the economy and integration of
conventional CMOS.
Figure 1. Functional Diagram
RFC
RF1
ESD
RF2
ESD
Product Specification
PE4250
SPDT UltraCMOS™ RF Switch
10 – 3000 MHz, Reflective
Features
HaRP-Technology Enhanced
Low Insertion Loss: 0.65 dB @ 1000 MHz
High Isolation: 51 dB @ 1000 MHz
P1dB typical: +30.5 dBm
IIP3 typical: +59 dBm
Fast switching time: 150 ns
Flexible supply voltage: 3.3 V ±10% or 5.0
V ±10% supply (see table 3)
Excellent ESD protection: 4000 V HBM
No blocking capacitors required
Single pin or complementary control inputs
Figure 2. Package Type
8-lead MSOP
CMOS
Control
Driver
V1 V2
Table 1. Target Electrical Specifications Temp = 25°C, VDD = 3.3 or 5.0 V
Parameter
Operation Frequency1
Insertion Loss (RF1/RF2)
Isolation (RFC to RF1/RF2)
Return Loss
Input 1 dB Compression2
Input IP3
Switching Time
Conditions
10 MHz
1000 MHz
2000 MHz
3000 MHz
1000 MHz
2000 MHz
3000 MHz
1000 MHz
2000 MHz
3000 MHz
50 - 3000 MHz
50 - 3000 MHz, +18 dBm per tone, 5 MHz spacing
50% CTRL to 10/90% RF
Min
10
50
46
35
Notes: 1. Device linearity will begin to degrade below 10 MHz.
2. Note Absolute Maximum rating of PIN = 27 dBm.
Typical
0.6
0.65
0.75
0.75
51
48
40
25
23
20
30.5
59
150
Max
3000
0.65
0.70
0.80
0.90
300
Units
MHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
ns
Document No. 70-0254-02 www.psemi.com
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
Logo updated under non-rev change. Peregrine products are protected under one or more of the following U.S. Patents: http://patents.psemi.com
Page 1 of 9

PagesPages 9
Télécharger [ PE4250 ]


Fiche technique recommandé

No Description détaillée Fabricant
PE4250 SPDT High Isolation UltraCMOS? RF Switch Peregrine Semiconductor
Peregrine Semiconductor
PE4251 RF Switch Peregrine Semiconductor
Peregrine Semiconductor
PE42510A SPDT High Power UltraCMOS RF Switch 30-2000 MHz Peregrine Semiconductor
Peregrine Semiconductor
PE42520 SPDT RF Switch Peregrine Semiconductor
Peregrine Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche