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PDF HMC758LP3 Data sheet ( Hoja de datos )
| Número de pieza | HMC758LP3 | |
| Descripción | GaAs SMT PHEMT LOW NOISE AMPLIFIER | |
| Fabricantes | Hittite Microwave Corporation | |
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v00.1108
8
Typical Applications
The HMC758LP3(E) is ideal for:
• Cellular Infrastructure, WiMAX & LTE/4G
• Software Defined Radios
• Repeaters and Femtocells
• Access Points
• Test & Measurement Equipment
Functional Diagram
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HMC758LP3 / 758LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Features
Noise Figure: 1.7 dB
Gain: 22 dB
Output IP3: +37 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3 mm SMT Package: 9 mm2
General Description
The HMC758LP3(E) is a GaAs PHEMT MMIC Low
Noise Amplifier that is ideal for Cellular Infrastructure,
WiMAX & LTE/4G basestation front-end receivers
operating between 700 and 2200 MHz. The amplifier
has been optimized to provide 1.7 dB noise figure,
21 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC758LP3(E) can
be biased with +3V to +5V and features an externally
adjustable supply current, which allows the designer
to tailor the linearity performance of the LNA for
each application.
8 - 342
Electrical Specifications, TA = +25° C, R1= 390Ω, R2= 560Ω*
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
Vdd = +3V
Min. Typ. Max. Min. Typ. Max.
700 - 1700
1700 - 2200
19 21.8
16 19.4
0.005
0.01
1.6 2.5
1.4 1.8
15 13
11 15
Vdd = +5V
Min. Typ. Max. Min. Typ. Max.
700 - 1700
1700 - 2200
20 22.7
18 21.3
0.004
0.01
1.7 2.6
1.6 2.0
14 14
10 12
Units
MHz
dB
dB/ °C
dB
dB
dB
16 18
18 20
20.5 22.5
22 24
dBm
20 21.5 23.5 25 dBm
31 31.5 36
35 dBm
80 102 130 80 102 130 190 227 260 190 227 260 mA
* R1 & R2 resistors set current, see application circuit herein
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
v00.1108
8
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
(Vdd = +5V)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 20 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+6 V
+5 dBm
150 °C
1.3 W
50 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC758LP3 / 758LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
HMC758LP3
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC758LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
758
XXXX
758
XXXX
8 - 346
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC758LP3.PDF ] | |
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