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PDF HMC756 Data sheet ( Hoja de datos )
| Número de pieza | HMC756 | |
| Descripción | GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER | |
| Fabricantes | Hittite Microwave Corporation | |
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Hay una vista previa y un enlace de descarga de HMC756 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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v01.0709
Typical Applications
The HMC756 is ideal for:
• Point-to-Point Radios
3 • Point-to-Multi-Point Radios
• VSAT
• Military & Space
Functional Diagram
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HMC756
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 16 - 24 GHz
Features
Saturated Output Power: +33 dBm @ 28% PAE
High Output IP3: +41 dBm
High Gain: 23 dB
DC Supply: +7V @ 790 mA
DC Blocked RF I/Os
No External Matching Required
Die Size: 2.4 x 1.6 x 0.1 mm
General Description
The HMC756 is a three stage GaAs PHEMT MMIC
1 Watt Power Amplifier which operates between 16
and 24 GHz. The HMC756 provides 23 dB of gain,
and +33 dBm of saturated output power at 28% PAE
from a +7V supply. The RF I/Os are DC blocked and
matched to 50 Ohms for ease of integration into
Multi-Chip-Modules (MCMs). All data is taken with
the chip in a 50 Ohm test fixture connected via 0.025
mm (1 mil) diameter wire bonds of length 0.31 mm
(12 mils).
Electrical Specifications, TA = +25° C, Vdd = Vdd1, = Vdd2 = +7V, Idd = 790 mA [1]
Parameter
Min.
Typ.
Max.
Min.
Typ. Max.
Frequency Range
16 - 20
20 - 24
Gain
19 22
20 23
Gain Variation Over Temperature
0.026
0.03
Input Return Loss
16 15
Output Return Loss
18 16
Output Power for 1 dB Compression (P1dB)
29 31
30 32
Saturated Output Power (Psat)
33 33
Output Third Order Intercept (IP3)[2]
41 40
Total Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd= 790 mA typical.
[2] Measurement taken at +7V @ 790 mA, Pin / Tone = +17 dBm
790
790
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
3 - 126
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
v01.0709
3
Absolute Maximum Ratings
Drain Bias Voltage (Vd)
RF Input Power (RFIN)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 86 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+7V
+26 dBm
150 °C
5.6 W
11.7 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC756
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 16 - 24 GHz
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+6.5
757
+7.0 790
+7.5 832
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 790 mA at +7V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
3 - 130
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC756.PDF ] | |
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