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11N60C3 fiches techniques PDF

Infineon Technologies - SPP11N60C3

Numéro de référence 11N60C3
Description SPP11N60C3
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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11N60C3 fiche technique
SPP11N60C3
SPI11N60C3, SPA11N60C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
Periodic avalanche rated
PG-TO220-3-31 PG-TO262-3
Extreme dv/dt rated
High peak current capability
Improved transconductance
P-TO220-3-31
23
1
PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
650 V
0.38
11 A
PG-TO220
Type
SPP11N60C3
SPI11N60C3
SPA11N60C3
Package
Ordering Code
PG-TO220-3 Q67040-S4395
PG-TO262-3 Q67042-S4403
PG-TO220-3-31 SP000216312
Marking
11N60C3
11N60C3
11N60C3
Maximum Ratings
Parameter
www.DataSheet4U.com
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 7)
Symbol
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
Value
SPP_I
SPA
11 111)
7 71)
33 33
340 340
0.6 0.6
11 11
±20 ±20
±30 ±30
125 33
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 2.6
Page 1
2005-09-21

PagesPages 15
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