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Numéro de référence | 10WT10FN | ||
Description | High Performance Schottky Generation | ||
Fabricant | Vishay | ||
Logo | |||
1 Page
10UT10, 10WT10FN
Vishay High Power Products
High Performance
Schottky Generation 5.0, 10 A
10UT10
10WT10FN
Base
cathode
4
13
Anode 2 Anode
Cathode
I-PAK (TO-251AA)
Base
cathode
4
2
1 Cathode 3
Anode
Anode
D-PAK (TO-252AA)
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
PRODUCT SUMMARY
IF(AV)
VRRM
Maximum VF at 10 A at 125 °C
10 A
100 V
0.66 V
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
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SYMBOL
CHARACTERISTICS
VRRM
VF
TJ
10 Apk, TJ = 125 °C (typical)
Range
VALUES
100
0.615
- 55 to 175
UNITS
V
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
VR
TEST CONDITIONS
TJ = 25 °C
10UT10
10WT10FN
100
UNITS
V
Document Number: 94647
Revision: 04-May-09
For technical questions, contact: [email protected]
www.vishay.com
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Pages | Pages 7 | ||
Télécharger | [ 10WT10FN ] |
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