DataSheetWiki


M54561P fiches techniques PDF

Mitsubishi Electric Semiconductor - 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY

Numéro de référence M54561P
Description 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
Fabricant Mitsubishi Electric Semiconductor 
Logo Mitsubishi Electric Semiconductor 





1 Page

No Preview Available !





M54561P fiche technique
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54561P
7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54561P is seven-circuit output-sourcing Darlington transis-
tor arrays. The circuits are made of PNP and NPN transis-
tors. Both the semiconductor integrated circuits perform
high-current driving with extremely low input-current supply.
FEATURES
q High breakdown voltage (BVCEO 40V)
q High-current driving (Io(max) = –300mA)
q With output clamping diodes
q Active “L” input
q Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION (TOP VIEW)
INPUTS
IN11
IN22
IN33
IN44
IN55
IN66
IN77
VS 8
16 O1
15 O2
14 O3
13 O4 OUTPUTS
12 O5
11 O6
10 O7
9 SUB
Outline 16P4
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic sys-
tems and relays, solenoids, or small motors
CIRCUIT SCHEMATIC
INPUT
27k
20k
VS
FUNCTION
The M54561P have seven circuits of current-sourcing out-
puts. Darlington transistor, which are made of PNP transis-
tor and NPN transistor. Resistance of 20kis connected be-
tween PNP transistor base and input pin. PNP transistor
emitters and NPN transistor collector is connected VS (pin 8),
and spike killer clamping diode is provided between each
www.DataoSuhtepeutt4pUi.ncso.m
Output currene is 300mA maximum and supply voltage VS is
40V maximum operate Active “L” input.
7k 3k
OUTPUT
* SUB must be the lowest voltage in a circuit.
SUB*
The seven circuits share the VS and SUB.
The diodes shown by broken line are parasite diodes and must
not be used.
Unit :
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCEO
VS
VI
IO
IF
VR
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Supply voltage
Input voltage
Output current
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, L
Conditions
Current per circuit output, H
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ VS
40
–0.5 ~ VS
–300
–300
40
1.47
–20 ~ +75
–55 ~ +125
Unit
V
V
V
mA
mA
V
W
°C
°C
Aug. 1999

PagesPages 4
Télécharger [ M54561P ]


Fiche technique recommandé

No Description détaillée Fabricant
M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche