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PDF 2SC3632-Z Data sheet ( Hoja de datos )
| Número de pieza | 2SC3632-Z | |
| Descripción | NPN Silicon Epitaxial Transistor | |
| Fabricantes | Guangdong Kexin | |
| Logotipo |  |
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SMD Type
Transistors
NPN Silicon Epitaxial Transistor
2SC3632-Z
Features
High voltage VCEO=600V
High speed tf 0.5ìs
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCES
Emitter to base voltage
VEBO
Peak collector current *1
ICP
Collector current
IC
Total power dissipation Ta= 25 *2
PT
Junction temperature
Tj
Storage temperature
Tstg
*1 pw 10ms,Duty cycle 50%
www.Data*S2hweheetn4Um.ocuonmted on ceramic substrate of 7.5cm2X0.7mm
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
Rating
600
600
7
2
1
2
150
-55 to +150
Unit
V
V
V
A
A
W
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
collecotr cutoff current
Emitter cutoff current
DC Current Gain
Collector saturation voltage
Base to saturation voltage
Gain Bandwidth Product
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
cob
ton
tstg
tf
Testconditons
VCB=600V,IE=0
VEB=7V,IC=0
VCE=5V,IC=100mA
VCE=5V,IC=100mA
IC=400mA,IB=80mA
IC=400mA,IB=80mA
VCE=5V,IE=-50mA
VCB=10V,IE=0A,f=1MHz
IC=0.5A,RL=500Ù
IB1=-IB2=0.1A
VCC=250V
Min Typ Max Unit
10 ìA
10 ìA
30 55 120
57
0.35 1.0 V
0.9 1.2 V
30 MHz
14 pF
0.1 0.5 ìs
4.0 5.0 ìs
0.2 0.5 ìs
hFE Classification
Marking
M
hFE 30 to 60
L
40 to 80
K
60 to 120
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| PDF Descargar | [ Datasheet 2SC3632-Z.PDF ] | |
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