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PDF 42N65M5 Data sheet ( Hoja de datos )
| Número de pieza | 42N65M5 | |
| Descripción | STB42N65M5 | |
| Fabricantes | ST Microelectronics | |
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STx42N65M5
N-channel 650 V, 0.070 Ω, 33 A MDmesh™ V Power MOSFET
I2PAK, TO-220, TO-220FP, D2PAK, TO-247
Features
Type
STB42N65M5
STF42N65M5
STI42N65M5
STP42N65M5
STW42N65M5
VDSS @
TJmax
710 V
710 V
710 V
710 V
710 V
RDS(on)
max
< 0.079 Ω
< 0.079 Ω
< 0.079 Ω
< 0.079 Ω
< 0.079 Ω
ID
33 A
33 A (1)
33 A
33 A
33 A
1. Limited only by maximum temperature allowed
■ TO-220 worldwide best RDS(on)
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
Application
3
2
1
TO-220FP
3
1
D²PAK
3
2
1
TO-220
123
I²PAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
■ Switching applications
www.DataSDheeets4Uc.croimption
'
MDmesh V is a revolutionary Power MOSFET
technology, which combines an innovative
proprietary vertical process with the well known
company`s PowerMESH™ horizontal layout. The
resulting product has an extremely low on-
resistance, unmatched among silicon-based
Power MOSFETs, making it especially suited for
applications which require superior power density
and outstanding efficiencies.
Table 1. Device summary
Order codes
Marking
STB42N65M5
STF42N65M5
STI42N65M5
STP42N65M5
STW42N65M5
42N65M5
42N65M5
42N65M5
42N65M5
42N65M5
3
!-V
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Tube
January 2009
Rev 1
1/18
www.st.com
18
1 page  
STx42N65M5
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 400 V, ID = 20 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 20)
Min.
Typ.
61
24
65
13
Max Unit
ns
ns
ns
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 33 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 33 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 25)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 33 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 25)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
33 A
132 A
1.5 V
400 ns
7 µC
35 A
532 ns
10 µC
38 A
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5 Page 
STx42N65M5
Dim
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Package mechanical data
TO-220 mechanical data
Min
4.40
0.61
1.14
0.48
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
mm
Typ
1.27
16.40
28.90
Max
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
Min
0.173
0.024
0.044
0.019
0.6
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
Typ
0.050
0.645
1.137
Max
0.181
0.034
0.066
0.027
0.62
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.151
0.116
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