FLM1011-12F Datasheet PDF - Eudyna Devices
| Part Number | FLM1011-12F | |
| Description | Ku-Band Internally Matched FET | |
| Manufacturers | Eudyna Devices | |
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FLM1011-12F
X, Ku-Band Internally Matched FET
FEATURES
• High Output Power: P1dB = 40.5dBm (Typ.)
• High Gain: G1dB = 6.0dB (Typ.)
• High PAE: ηadd = 25% (Typ.)
• Low IM3 = -45dBc@Po = 29.5dBm
• Broad Band: 10.7 ~ 11.7GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
DESCRIPTION
The FLM1011-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15 V
Gate-Source Voltage
VGS
-5 V
Total Power Dissipation
PT Tc = 25°C
57.6 W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175 °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with
gate resistance of 50Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Unit
www.DatSaaShtueerta4tUe.dcoDmrain Current
IDSS VDS = 5V, VGS = 0V
- 6000 9000
mA
Transconductance
gm VDS = 5V, IDS = 3600mA - 5000 -
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 300mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO IGS = -340µA
-5 -
-
V
Output Power at 1dB G.C.P.
P1dB
39.5 40.5 -
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-Added Efficiency
G1dB
Idsr
ηadd
VDS = 10V
f = 10.7 ~ 11.7 GHz
IDS = 0.6 IDSS(Typ.)
ZS = ZL = 50Ω
5.0 6.0 -
- 3600 4500
- 25 -
dB
mA
%
Gain Flatness
∆G
- - ±0.6
dB
3rd Order Intermodulation
Distortion
Thermal Resistance
f = 11.7GHz, ∆f = 10MHz
IM3 2-Tone Test
-42 -45
Pout = 29.5 dBm S.C.L.
-
Rth Channel to Case
- 2.3 2.6
dBc
°C/W
Channel Temperature Rise
CASE STYLE: IB
∆Tch 10V x Idsr x Rth
- - 80
°C
G.C.P.: Gain Compression Point
Edition 1.3
August 2004
1
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FLM1011-12F electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FLM1011-12F.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| FLM1011-12F | The function is Ku-Band Internally Matched FET. Eudyna Devices | |
| FLM1011-12F | The function is X / Ku-Band Internally Matched FET. SUMITOMO |  |
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