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Taiwan Semiconductor Company - (SDB12 - SDB110) Schottky Barrier Rectifiers

Numéro de référence SDBS14
Description (SDB12 - SDB110) Schottky Barrier Rectifiers
Fabricant Taiwan Semiconductor Company 
Logo Taiwan Semiconductor Company 





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SDBS14 fiche technique
SDBS12 THRU SDBS110
Features
1.0 AMP. Schottky Barrier Rectifiers
Voltage Range
20 to 100 Volts
Current
1.0 Ampere
DB
Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-O
Epitaxial construction
High temperature soldering:
260oC/ 10 seconds at terminals
Small size, single installation lead solderable per
MIL-STD-202 Method 208
Mechanical Data
DBS
.047(1.20)
.040(1.02)
.205(5.2)
.195(5.0)
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
.335(8.51)
.320(8.13) 450
.013(0.33)
.0088(0.22)
.404(10.3)
.386(9.80)
.255(6.5)
.245(6.2)
.130(3.30)
.120(3.05)
.060(1.53)
.040(1.02)
.013(0.33)
.003(0.076)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol SDB SDB SDB SDB SDB SDB SDB Units
12 13 14 15 16 19 110
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SDBS SDBS SDBS SDBS SDBS SDBS SDBS
12 13 14 15 16 19 110
Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 90 100 V
Maximum RMS Voltage
VRMS 14 21 28 35 42 63 70 V
Maximum DC Blocking Voltage
VDC 20 30 40 50 60 90 100 V
Maximum Average Forward Rectified Current
at TL(See Fig. 1)
I(AV)
1.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
IFSM
30
A
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
(Note 1) @ 1.0A
VF
0.5
0.75
0.80
V
Maximum DC Reverse Current @ TA =25
at Rated DC Blocking Voltage @ TA=100
IR
0.4
10
5.0
0.05
0.5
mA
mA
Typical Junction Capacitance (Note 3)
Cj
50 pF
Typical Thermal Resistance ( Note 2 )
RθJL
RθJA
28 /W
88 /W
Operating Temperature Range
TJ -65 to +125
-65 to +150
Storage Temperature Range
TSTG
Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle
-65 to +150
2. Measured on P.C.Board with 0.5 x 0.5”(12 x 12mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
- 50 -

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