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Numéro de référence | 2SC5803 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | Inchange Semiconductor Company | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5803
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high voltage color display horizontal
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
1500
V
wwwVCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
www.DataSheet4U.com
6V
IC Collector Current- Continuous
12 A
ICM Collector Current- Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
24 A
70 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ 2SC5803 ] |
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