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Inchange Semiconductor Company - Silicon NPN Power Transistor

Numéro de référence 2SC5803
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor Company 
Logo Inchange Semiconductor Company 





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2SC5803 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5803
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high voltage color display horizontal
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
1500
V
wwwVCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
www.DataSheet4U.com
6V
IC Collector Current- Continuous
12 A
ICM Collector Current- Peak
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
24 A
70 W
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn

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