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PDF RJK6022DJE Data sheet ( Hoja de datos )
| Número de pieza | RJK6022DJE | |
| Descripción | Silicon N Channel MOSFET High Speed Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RJK6022DJE (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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RJK6022DJE
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low drive current
• High density mounting
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
G
321
Absolute Maximum Ratings
Item
www.DataSheet4U.com
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
Pch
θch-a
Tch
Tstg
REJ03G1484-0600
Rev.6.00
Nov 10, 2006
D
1. Source
2. Drain
3. Gate
S
Ratings
600
±30
0.2
0.8
0.2
0.8
0.9
139
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
Rev.6.00 Nov 10, 2006 page 1 of 6
1 page  
RJK6022DJE
10
Normalized Transient Thermal Impedance vs. Pulse Width
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
1shot
pulse
0.01
10 µ 100 µ
1m
θch – a (t) = γ s (t) • θch – a
θch – a = 139°C/W, Ta = 25°C
PDM
D=
PW
T
PW
T
10 m 100 m
1
10
Pulse Width PW (S)
100 1000 10000
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 300 V
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Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
Rev.6.00 Nov 10, 2006 page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK6022DJE.PDF ] | |
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