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RJK6020DPK fiches techniques PDF

Renesas Technology - Silicon N Channel MOSFET High Speed Power Switching

Numéro de référence RJK6020DPK
Description Silicon N Channel MOSFET High Speed Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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RJK6020DPK fiche technique
RJK6020DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
1
2
3
G
S
REJ03G1465-0200
Rev.2.00
Sep 21, 2006
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
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Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
600
±30
32
96
32
96
8.5
3.9
200
0.625
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.2.00 Sep 21, 2006 page 1 of 6

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