DataSheetWiki


IRHNB7264SE fiches techniques PDF

International Rectifier - RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Numéro de référence IRHNB7264SE
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Fabricant International Rectifier 
Logo International Rectifier 





1 Page

No Preview Available !





IRHNB7264SE fiche technique
PD - 91738A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-3)
IRHNB7264SE
250V, N-CHANNEL
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHNB7264SE 100K Rads (Si) 0.11
ID
34A
International Rectifier’s RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
SMD-3
Features:
! Single Event Effect (SEE) Hardened
! Ultra Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Surface Mount
! Light Weight
Absolute Maximum Ratings
www.DataSheet4U.com
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
Units
34
21 A
136
300 W
2.4 W/°C
±20 V
500 mJ
34 A
30 mJ
2.5
-55 to 150
V/ns
oC
300 (for 5 sec.)
3.3 (Typical)
g
1
6/4/01

PagesPages 8
Télécharger [ IRHNB7264SE ]


Fiche technique recommandé

No Description détaillée Fabricant
IRHNB7264SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT International Rectifier
International Rectifier

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche