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PDF IRHNB7260 Data sheet ( Hoja de datos )
| Número de pieza | IRHNB7260 | |
| Descripción | RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
| Fabricantes | International Rectifier | |
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Hay una vista previa y un enlace de descarga de IRHNB7260 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD - 91798A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-3)
IRHNB7260
200V, N-CHANNEL
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHNB7260 100K Rads (Si) 0.070Ω
IRHNB3260 300K Rads (Si) 0.070Ω
IRHNB4260 600K Rads (Si) 0.070Ω
IRHNB8260 1000K Rads (Si) 0.070Ω
ID
43A
43A
43A
43A
SMD-3
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
www.DataSheet4U.com
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
43
27 A
172
300 W
2.4 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
±20
500
43
30
5.7
-55 to 150
300 (for 5 Sec.)
3.5 (Typical )
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
12/7/01
1 page  
Pre-Irradiation
IRHNB7260
10000
8000
6000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
20 ID = 43 A
16
VDS = 160V
VDS = 100V
VDS = 40V
12
4000
2000
Coss
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 40 80 120 160 200 240
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
www.DataSheet4U.com100
TJ = 150° C
10
TJ = 25° C
1
0.1
0.0
VGS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0
VSD ,Source-to-Drain Voltage (V)
3.5
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
100
100us
10 1ms
TC = 25°C
TJ = 150° C
Single Pulse
1
1 10
10ms
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHNB7260.PDF ] | |
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