PDF LE25FU406B Data sheet ( Hoja de datos )

Número de pieza	LE25FU406B
Descripción	CMOS IC 4M-bit (512K X 8) Serial Flash Memory
Fabricantes	Sanyo Semicon Device
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No Preview Available ! Ordering number : ENA1066A LE25FU406B CMOS IC 4M-bit (512K×8) Serial Flash Memory Overview The LE25FU406B is a serial interface-compatible flash memory device with a 512K × 8-bit configuration. It uses a single 2.5V power supply for both reading and writing (program and erase functions) and does not require a special power supply. As such, it can support on-board programming. It has three erase functions, each of which corresponds to the size of the memory area in which the data is to be erased at one time: the small sector (4K bytes) erase function, the sector (64K bytes) erase function, and the chip erase function (for erasing all the data together). The memory space can be efficiently utilized by selecting one of these functions depending on the application. A page program method is supported for data writing. The page program method of the LE25FU406B can program any amount of data from 1 to 256 bytes. The program time of 2.0ms (typ.) when programming 256 bytes (1 page) at one time makes for fast data writing. While making the most of the features inherent to a serial flash memory device, the LE25FU406B is housed in an 8-pin ultra-miniature package. Serial flash memory devices tend to be at a disadvantage in terms of their read speed, but the LE25FU406B has maximally eliminated this speed-related disadvantage by supporting clocks with frequencies up to 30MHz under SPI bus specifications. All these features make this device ideally suited to storing program codes in applications such as portable information devices and small disk systems, which are required to have increasingly more compact dimensions. Features • Read/write operations enabled by single 2.5V power supply: 2.30 to 3.60V supply voltage range • Operating frequency : 30MHz 50MHz (at the planning stage) • Temperature range : 0 to 70°C www.DataSheet4U.com –40 to +85°C (at the planning stage) Continued on next page. This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by SANYO Semiconductor Co., Ltd. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. 70908 SY IM / 41608 SY IM No.A1066-1/22 1 page LE25FU406B Table 2 Command Settings Command 1st bus cycle 2nd bus cycle 3rd bus cycle 4th bus cycle 5th bus cycle 6th bus cycle Nth bus cycle Read 03h A23-A16 A15-A8 A7-A0 0Bh A23-A16 A15-A8 A7-A0 X Small sector erase D7h A23-A16 A15-A8 A7-A0 Sector erase D8h A23-A16 A15-A8 A7-A0 Chip erase C7h Page program 02h A23-A16 A15-A8 A7-A0 PD 1 PD 1 PD 1 Write enable 06h Write disable 04h Power down B9h Status register read 05h Status register write 01h DATA Read silicon ID 1 2 9Fh Read silicon ID 2 3 ABh X X A7-A0 Exit power down mode ABh Explanatory notes for Table 2 "X" signifies "don't care" (that is to say, any value may be input). The "h" following each code indicates that the number given is in hexadecimal notation. Addresses A23 to A19 for all commands are "Don't care". In order for commands other than the read command to be recognized, CS must rise after all the bus cycle input. 1: "PD" stands for page program data. Any amount of data from 1 to 256 bytes in 1-byte unit is input. 2: Of the two silicon ID commands, it is for the command with the 9Fh setting that the manufacturer code 62h is first output. For as long as the clock input is continued, 1Eh of the device code is output continuously, followed by the repeated output of 62h and 1Eh. 3: Of the two silicon ID commands, it is for the command with the ABh setting that manufacturer code 62h is first output when address A0 is "0", and the device code 1Eh is first output when address A0 is "1". Addresses A7 to A1 are "don't care". For as long as the clock input is continued, 62h and 1Eh are repeatedly output. www.DataSheet4U.com No.A1066-5/22 5 Page LE25FU406B 3. Write Enable Before performing any of the operations listed below, the device must be placed in the write enable state. Operation is the same as for setting status register WEN to "1", and the state is enabled by inputting the write enable command. "Figure 8 Write Enable" shows the timing waveforms when the write enable operation is performed. The write enable command consists only of the first bus cycle, and it is initiated by inputting (06h). • Small sector erase, sector erase, chip erase • Page program • Status register write 4. Write Disable The write disable command sets status register WEN to "0" to prohibit unintentional writing. "Figure 9 Write Disable" shows the timing waveforms. The write disable command consists only of the first bus cycle, and it is initiated by inputting (04h). The write disable state (WEN "0") is exited by setting WEN to "1" using the write enable command (06h). Figure 8 Write Enable Figure 9 Write Disable CS CS SCK SI Mode3 Mode0 01234567 8CLK 06h SCK SI Mode3 Mode0 01234567 8CLK 04h High Impedance SO High Impedance SO 5. Power-down The power-down command sets all the commands, with the exception of the silicon ID read command and the command to exit from power-down, to the acceptance prohibited state (power-down). "Figure 10 Power-down" shows the timing waveforms. The power-down command consists only of the first bus cycle, and it is initiated by inputting www.Da(tBaS9hhe)e. tH4Uo.wcoemver, a power-down command issued during an internal write operation will be ignored. The power-down state is exited using the power-down exit command (power-down is exited also when one bus cycle or more of the silicon ID read command (ABh) has been input). "Figure 11 Exiting from Power-down" shows the timing waveforms of the power-down exit command. Figure 10 Power-down Figure 11 Exiting from Power-down Power down mode Power down mode CS SCK SI Mode3 Mode0 01234567 tDP 8CLK B9h CS SCK SI Mode3 Mode0 01234567 tPRB 8CLK ABh High Impedance SO High Impedance SO No.A1066-11/22 11 Page

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