K1B3216BDD Datasheet PDF - Samsung Semiconductor
| Part Number | K1B3216BDD | |
| Description | 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM | |
| Manufacturers | Samsung Semiconductor | |
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K1B3216BDD
UtRAM
Document Title
2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
Revision History
Revision No. History
0.0 Initial Draft
- Design target
Draft Date
Remark
September 02, 2004 Preliminary
0.1 Revised
November 01, 2004 Preliminary
- Corrected the name of 9th row of balls on the pakage to ’J’ from ’I’
on page.2 and page.42
1.0 Finalize
April 06, 2005
Final
www.DataSheet4U.com
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 1.0
April 2005
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K1B3216BDD
LIST of FIGURES
Figure 1. Pin Description
Figure 2. Functional Block Diagram
Figure 3. Power Up Timing
Figure 4. Standby Mode State Machine
Figure 5. Mode Register Setting Timing
Figure 6. Asynchronous 4-Page Read
Figure 7. Asynchronous Write
Figure 8. Synchronous Burst Read
Figure 9. Synchronous Burst Write
Figure 10. Latency Configuration(Read)
Figure 11. WAIT Control and Read/Write Latency Control
Figure 12. AC Output Load Circuit(Asynchronous)
Figure 13. Timing Waveform of Asynchronous Read Cycle
Figure 14. Timing Waveform of Page Read Cycle
Figure 15. Timing Waveform of Write Cycle(Asynchronous, WE Controlled)
Figure 16. Timing Waveform of Write Cycle(Asynchronous, UB & LB Controlled)
Figure 17. Timing Waveform of Write Cycle(Asynchronous, Address Latch Type, WE Controlled)
Figure 18. Timing Waveform of Write Cycle(Asynchronous, Address Latch Type, UB & LB Controlled)
Figure 19. Timing Waveform of Write Cycle(Asynchronous, Low ADV Type, WE Controlled)
Figure 20. Timing Waveform of Write Cycle(Asynchronous, Low ADV Type, UB & LB Controlled)
Figure 21. Timing Waveform of Multiple Write Cycle(Asynchronous, Low ADV Type, WE Controlled )
Figure 22. AC Output Load Circuit(Synchronous)
Figure 23. Timing Waveform of Basic Burst Operation
Figure 24. Timing Waveform of Burst Read Cycle(CS Toggling Consecutive Burst Read)
Figure 25. Timing Waveform of Burst Read Cycle(CS Low Holding Consecutive Burst Read)
Figure 26. Timing Waveform of Burst Read Cycle(Last Data Sustaining)
Figure 27. Timing Waveform of Burst Write Cycle(CS Toggling Consecutive Burst Write)
Figure 28. Timing Waveform of Burst Write Cycle(CS Low Holding Consecutive Burst Write)
Figure 29. Timing Waveform of Burst Read Stop by CS
Figure 30. Timing Waveform of Burst Write Stop by CS
Figure 31. Timing Waveform of Burst Read Suspend Cycle
Figure 32. Synch. Burst Read to Asynch. Write(Address Latch Type) Timing Waveform
Figure 33. Synch. Burst Read to Asynch. Write(Low ADV Type) Timing Waveform
Figure 34. Asynch. Write(Address Latch Type) to Synch. Burst Read Timing Waveform
Figure 35. Asynch. Write(Low ADV Type) to Synch. Burst Read Timing Waveform
Figure 36. Synch. Burst Read to Synch. Burst Write Timing Waveform
Figure 37. Synch. Burst Write to Synch. Burst Read Timing Waveform
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UtRAM
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- 5 - Revision 1.0
April 2005
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K1B3216BDD electronic component. |
| Information | Total 30 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ K1B3216BDD.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| K1B3216BDD | The function is 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM. Samsung Semiconductor | |
| K1B3216BDD | The function is 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory. SAMSUNG ELECTRONICS |  |
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