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PDF RJK2508DPK Data sheet ( Hoja de datos )

Número de pieza RJK2508DPK
Descripción Silicon N Channel MOS FET High Speed Power Switching
Fabricantes Renesas Technology 
Logotipo Renesas Technology Logotipo



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No Preview Available ! RJK2508DPK Hoja de datos, Descripción, Manual

RJK2508DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
High speed switching
Outline
PRSS0004ZE-A
(Previous code: TO-3P)
D
G
S
REJ03G0508-0200
Rev.2.00
Feb.10.2005
1. Gate
2. Drain (Flange)
3. Source
1
2
3
Absolute Maximum Ratings
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Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
250
±30
50
100
50
100
17
18.0
150
0.833
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.2.00 Feb.10.2005 page 1 of 6

1 page




RJK2508DPK pdf
RJK2508DPK
Reverse Drain Current vs.
Source to Drain Voltage
100
Pulse Test
80
Gate to Source Cutoff Voltage
vs. Case Temperature
5
ID = 10 mA
4 1 mA
60
40
20
10 V
5V
VGS = 0 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
3
2 0.1 mA
1
0 VDS = 10 V
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
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0.03
0.02
0.01
1shot
pulse
0.01
10 µ
100 µ
θch – c(t) = γ s (t) • θ ch – c
θch – c = 0.833°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
10
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 125 V
Waveform
Vin
Vout
10%
10%
90%
td(on)
tr
90%
10%
90%
td(off)
tf
Rev.2.00 Feb.10.2005 page 5 of 6

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