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Renesas Technology - Silicon N Channel MOS FET High Speed Power Switching

Numéro de référence RJK2055DPA
Description Silicon N Channel MOS FET High Speed Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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RJK2055DPA fiche technique
RJK2055DPA
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low drive current
High density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 678
4 32 1
4
G
5 678
D DDD
REJ03G1735-0100
Rev.1.00
Sep 16, 2008
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
www.DataSheet4U.com
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
200
±30
20
40
20
40
9
5.4
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1735-0100 Rev.1.00 Sep 16, 2008
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