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Renesas Technology - Silicon N Channel MOS FET High Speed Power Switching

Numéro de référence RJK2006DPJ
Description Silicon N Channel MOS FET High Speed Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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RJK2006DPJ fiche technique
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
High speed switching
REJ03G0512-0100
Rev.1.00
Jan.14.2005
Outline
LDPAK
D
G
S
4 44
1
2
3
1
2
1
2
RJK2006DPE
3
3 RJK2006DPF
RJK2006DPJ
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
www.DaDtarSahineectu4rUre.cnotm
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
200
±30
40
100
40
100
27
48.6
100
1.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.1.00, Jan.14.2005, page 1 of 4

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RJK2006DPJ Silicon N Channel MOS FET High Speed Power Switching Renesas Technology
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