|
|
Numéro de référence | HAF2027 | ||
Description | Silicon N-Channel Power MOSFET Power Switching | ||
Fabricant | Renesas Technology | ||
Logo | |||
HAF2027(L), HAF2027(S)
Silicon N Channel Power MOS FET
Power Switching
REJ03G1674-0100
Rev.1.00
May 19, 2008
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
• Logic level operation (4 V Gate drive)
• Built-in the over temperature shut-down circuit
• High endurance capability against to the shut-down circuit
• Latch type shut down operation (need 0 voltage recovery)
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
www.DataSheet4U.com
123
HAF2027(L)
123
HAF2027(S)
D
1. Gate
2. Drain
(Flange)
3. Source
G Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
S
REJ03G1674-0100 Rev.1.00 May 19, 2008
Page 1 of 8
|
|||
Pages | Pages 9 | ||
Télécharger | [ HAF2027 ] |
No | Description détaillée | Fabricant |
HAF2021 | Silicon N Channel MOSFET Series Power Switching | Renesas Technology |
HAF2021L | Silicon N-Channel MOSFET | Renesas |
HAF2021S | Silicon N-Channel MOSFET | Renesas |
HAF2026RJ | Silicon N Channel Power MOSFET Power Switching | Renesas Technology |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |