(PDF) KTC3265 Datasheet - NPN Silicon Epitaxial Planar Transistor

Número de pieza	KTC3265
Descripción	NPN Silicon Epitaxial Planar Transistor
Fabricantes	Galaxy Semi-Conductor Holdings Limited
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No Preview Available ! BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES z High DC current gain: hFE:100-320 z Low saturation voltage. Pb Lead-free z Suitable for driver stage of small motor. z Complementary to KTC1298. z Small package. APPLICATIONS z Low frequency power amplifier application. z Power switching application. Production specification KTC3265 SOT-23 ORDERING INFORMATION Type No. Marking KTC3265 EO/EY Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value www.DataVSCheBeOt4U.com Collector-Base Voltage 35 VCEO Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 800 IBB Base Current 160 PC Collector Power Dissipation 200 Tj,Tstg Junction and Storage Temperature -55~150 Units V V V mA mA mW ℃ Document number: BL/SSSTC109 Rev.A www.galaxycn.com 1 1 page

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PDF KTC3265 Data sheet ( Hoja de datos )