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PDF FLK057XV Data sheet ( Hoja de datos )
| Número de pieza | FLK057XV | |
| Descripción | GaAs FET & HEMT Chips | |
| Fabricantes | Eudyna Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FLK057XV (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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FEATURES
• High Output Power: P1dB = 27.0dBm(Typ.)
• High Gain: G1dB = 7.0dB(Typ.)
• High PAE: ηadd = 32%(Typ.)
• Proven Reliability
DESCRIPTION
The FLK057XV chip is a power GaAs FET that is designed for
general purpose applications in the Ku-Band frequency range as
it provides superior power, gain, and efficiency.
FLK057XV
GaAs FET & HEMT Chips
Drain
Drain
Source
Source
Source
Gate
Gate
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
Ptot
Tstg
Tch
Tc = 25°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 4.4 and -0.2 mA respectively with
gate resistance of 1000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
3.75
-65 to +175
175
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
www.DatSaSahtueerta4tUe.dcomDrain Current
Transconductance
Symbol
Test Conditions
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 125mA
Min.
-
-
Pinch-off Voltage
Vp VDS = 5V, IDS = 10mA -1.0
Gate Source Breakdown Voltage
Output Power at 1dB
Gain Compression Point
VGSO
P1dB
Power Gain at 1dB
Gain Compression Point
G1dB
IGS = -10µA
VDS = 10V
IDS ≈ 0.6IDSS
f = 14.5GHz
-5
26
6
Limit
Typ. Max.
200 300
100 -
-2.0 -3.5
--
27 -
7-
Power-added Efficiency
ηadd
- 32 -
Thermal Resistance
Rth Channel to Case
-
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
20 40
Unit
V
V
W
°C
°C
Unit
mA
mS
V
V
dBm
dB
%
°C/W
Edition 1.3
July 1999
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FLK057XV.PDF ] | |
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