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PDF EIB1415-0.3P Data sheet ( Hoja de datos )
| Número de pieza | EIB1415-0.3P | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
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UPDATED 8/31/2006
EIB1415-0.3P
14.0-14.5 GHz 0.3-Watt Internally Matched Power FET
FEATURES
• 14.0– 14.5GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +26.0 dBm Output Power at 1dB Compression
• 8.0 dB Power Gain at 1dB Compression
• 32% Power Added Efficiency
• Non - Hermetic Metal Flange Package
0.080
MIN
0.433 0.362
GATE
Excelics
EIB1415-0.3P
0.080
MIN
DRAIN
0.020
0.250
YYWW
SN
0.025
0.070
0.256
0.200
0.004
0.051
0.100
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 14.0-14.5GHz
VDS = 8 V, IDSQ ≈ 120mA
Gain at 1dB Compression
f = 14.0-14.5GHz
VDS = 8 V, IDSQ ≈ 120mA
Gain Flatness
f = 14.0-14.5GHz
VDS = 8 V, IDSQ ≈ 120mA
Power Added Efficiency at 1dB Compression
VDS = 8 V, IDSQ ≈ 120mA
f = 14.0-14.5GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 14.0-14.5GHz
Output 3rd Order Intermodulation Distortion
∆f=10MHz 2-Tone Test. Pout=14.0 dBm S.C.L
Vds = 8 V, IDSQ ≈ 65% IDSS
f = 14.5GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
www.DataSheVePt4U.comPinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 2.0 mA
Note: 1) Tested with 200 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
MIN
24.0
7.0
TYP
26.0
8.0
32
130
MAX
±0.6
150
UNITS
dBm
dB
dB
%
mA
-43 -46
dBc
210 300 mA
-2.0 -3.5
V
55 60 oC/W
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Igsf Forward Gate Current
Igsr
Reverse Gate Current
Pin Input Power
Tch Channel Temperature
Tstg
Storage Temperature
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
ABSOLUTE1
12
-5
3.6mA
-0.6mA
24.0dBm
175 oC
-65 to +175 oC
2.5W
CONTINUOUS2
8V
-4V
1.2mA
-0.2mA
@ 3dB Compression
175 oC
-65 to +175 oC
2.5W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1
Revised August 2006
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| PDF Descargar | [ Datasheet EIB1415-0.3P.PDF ] | |
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