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PDF K3594-01 Data sheet ( Hoja de datos )
| Número de pieza | K3594-01 | |
| Descripción | MOSFET ( Transistor ) - 2SK3594-01 | |
| Fabricantes | Fuji Electric | |
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Hay una vista previa y un enlace de descarga de K3594-01 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2SK3594-01
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220AB
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
200 V
Continuous drain current
VDSX *5
ID
170 V
±45 A Equivalent circuit schematic
Pulsed drain current
ID(puls]
±180
A
Gate-source voltage
VGS
±30 V
Drain(D)
Non-repetitive Avalanche current IAS *2
45 A
Maximum Avalanche Energy
EAS *1
258.9
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Ta=25°C
Tc=25°C
5
2.02
270
kV/µs
W
Gate(G)
Source(S)
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=205µH, Vcc=48V,Tc=25°C, See to avalanche Energy Graph *2 Tch <=150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS <= 200V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
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Item
Symbol
Test Conditions
Drain-source breakdown voltaget
V(BR)DSS
ID= 250µA VGS=0V
Gate threshold voltage
VGS(th)
ID= 250µA VDS=VGS
Min. Typ.
200
3.0
Max. Units
V
5.0 V
Zero gate voltage drain current
Gate-source leakage current
IDSS
IGSS
VDS=200V VGS=0V
VDS=160V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
25
250
10 100
µA
nA
Drain-source on-state resistance
RDS(on)
ID=15A VGS=10V
50 66 mΩ
Forward transcondutance gfs ID=15A VDS=25V
12.5 25
S
Input capacitance
Ciss VDS=75V
1960 2940
pF
Output capacitance
Coss
VGS=0V
260 390
Reverse transfer capacitance
Turn-on time ton
Crss
td(on)
tr
f=1MHz
VCC=48V ID=15A
VGS=10V
18 27
20 30 ns
17 26
Turn-off time toff
td(off)
tf
RGS=10 Ω
53 80
19 29
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
QG
QGS
QGD
IAV
VSD
trr
Qrr
VCC=100V
ID=30A
VGS=10V
L=205µH Tch=25°C
IF=30A VGS=0V Tch=25°C
IF=30A VGS=0V
-di/dt=100A/µs Tch=25°C
51 76.5 nC
15 22.5
16 24
45 A
1.10 1.65 V
0.19 µs
1.4 µC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/denshi/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.463 °C/W
62.0 °C/W
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet K3594-01.PDF ] | |
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