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PDF P10NB20FP Data sheet ( Hoja de datos )
| Número de pieza | P10NB20FP | |
| Descripción | STP10NB20FP | |
| Fabricantes | STMicroelectronics | |
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Hay una vista previa y un enlace de descarga de P10NB20FP (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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STP10NB20
STP10NB20FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
STP10NB20
200 V
STP10NB20FP 200 V
< 0.40 Ω
< 0.40 Ω
10 A
6A
s TYPICAL RDS(on) = 0.3 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
www.DataShePetO4UW.cEomR SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VD GR
VGS
ID
ID
Drain- gate Volt age (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Tstg Storage T emperat ure
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
November 1997
Value
Unit
STP10NB20 STP10NB20FP
200 V
200
± 30
10
6
V
V
A
6 4A
40 40 A
85
0.68
30
0.24
W
W/oC
5.5 5.5 V/ns
2000
-65 to 150
150
(1) ISD ≤ 10A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V
oC
oC
1/9
1 page  
Gate Charge vs Gate-source Voltage
Capacitance Variations
STP10NB20/FP
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
www.DataSheet4U.com
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet P10NB20FP.PDF ] | |
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