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Numéro de référence | 2SC5826 | ||
Description | Power transistor | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Transistors
Power transistor (60V, 3A)
2SC5826
2SC5826
zFeatures
1) High speed switching.
(Tf : Typ. : 30ns at IC = 3A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 2A, IB = 0.2mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2073
zApplications
Low frequency amplifier
High speed switching
zExternal dimensions (Unit : mm)
ATV
6.8 2.5
0.65Max.
(1) Emitter
(2) Collector
(3) Base
0.5
(1) (2) (3)
2.54 2.54
1.05
Symbol : C5826
0.45
zStructure
NPN Silicon epitaxial planar transistor
zPackaging specifications
Type
Package
Code
2SC5826
www.DataSheet4U.com
Basic ordering unit (pieces)
Taping
TV2
2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
DC
Pulsed
IC
ICP
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature
∗Pw=100ms
Tstg
Limits
60
60
6
3
6
1.0
150
−55 to 150
Unit
V
V
V
A
A∗
W
°C
°C
1/3
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Pages | Pages 4 | ||
Télécharger | [ 2SC5826 ] |
No | Description détaillée | Fabricant |
2SC5820 | Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator | Renesas Technology |
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2SC5825 | Power transistor (60V/ 3A) | ROHM Semiconductor |
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