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PDF 2SC5829 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5829 | |
| Descripción | For High Speed Switching | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistors
2SC5829
Silicon NPN epitaxial planar type
For high speed switching
■ Features
• Allowing the small current and low voltage operation
• High transition frequency fT
• Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
10
7
2
10
50
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
Unit: mm
32
1.00±0.05
1
0.39+−00..0013
0.25±0.05
0.25±0.05
1
32
0.65±0.01
0.05±0.03
Marking Symbol: X
1: Base
2: Emitter
3: Collector
ML3-N2 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
www.DEamtaittSerh-beaeset4cUut.ocfof cmurrent (Collector open) IEBO VEB = 1.5 V, IC = 0
Forward current transfer ratio
hFE VCE = 1 V, IC = 1 mA
Transition frequency
fT VCE = 1 V, IC = 1 mA, f = 0.8 GHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 1 V, IE = 0, f = 1 MHz
1 µA
1 µA
100 200
4 GHz
0.4 pF
Forward transfer gain
Maximum unilateral power gain
Noise figure
S21e2
GUM
NF
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
6 dB
15 dB
3.5 dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
SJC00287AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC5829.PDF ] | |
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