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PDF HMS1M32M8LA Data sheet ( Hoja de datos )

Número de pieza HMS1M32M8LA
Descripción SRAM MODULE 4Mbyte
Fabricantes Hanbit Electronics 
Logotipo Hanbit Electronics Logotipo



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HANBit
HMS1M32M8LA
SRAM MODULE 4Mbyte(1Mx32Bit) ,LOW POWER,72Pin SIMM,5V
Part No. HMS1M32M8LA
GENERAL DESCRIPTION
The HMS1M32M8LA is a static random access memory (SRAM) module containing 1,048,576 bits organized in a x32-bit
configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-pin, double-sided, FR4-printed circuit board.
The HMS1M32M8LA also support low data retention voltage for battery back-up operations with low data retention current.
Eight chip enable inputs, (/CE0, /CE1, /CE2, /CE3, /CE4, /CE5, /CE6, /CE7) are used to enable the modules 4M bytes
independently. Output enable(/OE) and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is
accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from
a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.
FEATURES
w Part identification
- HMS1M32M8LA : SIMM design
w Access times : 55ns, 70ns
w High-density 4MByte design
w High-reliability, low-power design
w Single + 5V ±0.5V power supply
w Low data retention voltage : 2V(min)
w Three state output and TTL-compatible
w FR4-PCB design
w Low profile 72-Pin SIMM
www.DataSheet4U.com
OPTIONS
w Timing
55ns access
70ns access
w Packages
72-pin SIMM
72-pin ZIP
MARKING
-55
-70
M
Z
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
PIN ASSIGNMENT
PIN SYMBOL PIN SYMBOL PIN SYMBOL
1 Vcc 25 DQ13 49 DQ27
2 Vcc 26 DQ5 50 DQ19
3 Vss 27 DQ14 51 A3
4 Vss 28 DQ6 52 A10
5 Vss 29 DQ15 53 A4
6 Vss 30 DQ7 54 A11
7 Vss 31 /OE 55 A5
8
DQ0
32
/CE3
56
A12
9
DQ8
33
A15
57
Vcc
10 DQ1 34 A14 58 A13
11 DQ9 35
/CE6
59
A6
12 DQ2 36
/CE7
60 DQ20
13 DQ10 37
/CE4
61 DQ28
14 DQ3 38
/CE5
62 DQ21
15 DQ11 39 A17 63 DQ29
16 Vcc 40 A16 64 DQ22
17 A0 41 /CE2 65 DQ30
18 A7 42 Vss 66 DQ23
19 A1 43 DQ24 67 DQ31
20 A8 44 DQ16 68 Vss
21 A2 45 DQ25 69 A18
22 A9 46 DQ17 70 /WE
23 DQ12 47 DQ26 71 /CE1
24 DQ4 48 DQ18 72 /CE0
SIMM
TOP VIEW
1 HANBit Electronics Co.,Ltd.

1 page




HMS1M32M8LA pdf
HANBit
READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Output
Output Enable to Low-Z Output
Chip Enable to Low-Z Output
Output Disable to High-Z Output
Chip Disable to High-Z Output
Output Hold from Address Change
WRITE CYCLE
PARAMETER
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
www.DDaatataShHeoeltd4Ufr.coommWrite Time
End of Write to Output Low-Z
HMS1M32M8LA
SYMBOL
tRC
tAA
tCO
tOE
tOLZ
tLZ
tOHZ
tHZ
tOH
-55
MIN MAX
55
55
55
25
5
10
0 20
0 20
10
-70
MIN MAX
70
70
70
35
5
10
0 25
0 25
10
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYMBOL
tWC
tCW
tAS
tAW
tWP
tWR
tWHZ
tDW
tDH
tOW
-55
MIN MAX
55
45
0
45
40
0
0 20
25
0
5
-70
MIN MAX
70
60
0
60
50
0
0 25
30
0
5
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMING DIAGRAMS
Please refer to timing diagram chart(II)
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
5 HANBit Electronics Co.,Ltd.

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