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PDF UNR111x Data sheet ( Hoja de datos )
| Número de pieza | UNR111x | |
| Descripción | Silicon PNP epitaxial planer transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistors with built-in Resistor
UNR111x Series (UN111x Series)
Silicon PNP epitaxial planar transistor
For digital circuits
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Resistance by Part Number
• UNR1110 (UN1110)
• UNR1111 (UN1111)
• UNR1112 (UN1112)
• UNR1113 (UN1113)
(R1)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
• UNR1114 (UN1114)
10 kΩ
• UNR1115 (UN1115)
10 kΩ
• UNR1116 (UN1116)
4.7 kΩ
• UNR1117 (UN1117)
22 kΩ
• UNR1118 (UN1118)
0.51 kΩ
• UNR1119 (UN1119)
• UNR111D (UN111D)
• UNR111E (UN111E)
• UNR111F (UN111F)
• UNR111H (UN111H)
• UNR111L (UN111L)
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
(R2)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
www.DataSheet4U.com
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
−50
−50
−100
400
150
−55 to +150
Unit
V
V
mA
mW
°C
°C
6.9±0.1
(1.5)
(1.5)
R 0.7
R 0.9
(0.85)
0.55±0.1
321
(2.5) (2.5)
Internal Connection
R1
B
R2
Unit: mm
2.5±0.1
(1.0)
0.45±0.05
1: Base
2: Collector
3: Emitter
M-A1 Package
C
E
Publication date: October 2003
Note) The part numbers in the parenthesis show conventional part number.
SJH00001BED
1
1 page  
UNR111x Series
Cob VCB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
− 0.1 −1 −10 −100
Collector-base voltage VCB (V)
IO VIN
VIN IO
−104
VO = −5 V
−100
VO = − 0.2 V
Ta = 25°C
Ta = 25°C
−103 −10
−102
−1
−10 − 0.1
−1
− 0.4
− 0.6 − 0.8 −1.0 −1.2
Input voltage VIN (V)
−1.4
− 0.01
− 0.1
−1 −10
Output current IO (mA)
−100
Characteristics charts of UNR1113
−160
−120
−80
IC VCE
IB = −1.0 mA Ta = 25°C
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
−100
−10
VCE(sat) IC
IC / IB = 10
−1
− 0.3 mA
25°C
Ta = 75°C
−40
− 0.2 mA
− 0.1
− 0.1 mA
−25°C
0
0 −2 −4 −6 −8 −10 −12
www.DataShCeoellte4ctUor.-ceommitter voltage VCE (V)
− 0.01
− 0.1 −1 −10 −100
Collector current IC (mA)
hFE IC
400
VCE = −10 V
300 Ta = 75°C
25°C
200
−25°C
100
0
−1
−10
−100
−1 000
Collector current IC (mA)
Cob VCB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
− 0.1
−1
−10 −100
Collector-base voltage VCB (V)
IO VIN
VIN IO
−104
VO = −5 V
−100
VO = − 0.2 V
Ta = 25°C
Ta = 25°C
−103 −10
−102
−1
−10 − 0.1
−1
− 0.4
− 0.6 − 0.8 −1.0 −1.2
Input voltage VIN (V)
−1.4
− 0.01
− 0.1
−1 −10
Output current IO (mA)
−100
SJH00001BED
5
5 Page 
UNR111x Series
Cob VCB
6 f = 1 MHz
IE = 0
5 Ta = 25°C
4
3
2
1
0
− 0.1 −1
−10 −100
Collector-base voltage VCB (V)
IO VIN
VIN IO
−104
VO = −5 V
Ta = 25°C
−100
VO = − 0.2 V
Ta = 25°C
−103
−10
−102
−1
−10 − 0.1
−1
−1.5
−2.0 −2.5 −3.0 −3.5
Input voltage VIN (V)
−4.0
− 0.01
− 0.1
−1 −10
Output current IO (mA)
−100
Characteristics charts of UNR111F
IC VCE
−240
Ta = 25°C
−100
−200
−160
IB = −1.0 mA
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
−10
VCE(sat) IC
IC / IB = 10
−120
− 0.5 mA
−80
− 0.4 mA
− 0.3 mA
−40 − 0.2 mA
0 − 0.1 mA
0 −2 −4 −6 −8 −10 −12
www.DataShCeoellte4ctUor.-ceommitter voltage VCE (V)
−1
− 0.1
25°C
Ta = 75°C
−25°C
− 0.01
− 0.1 −1 −10 −100
Collector current IC (mA)
hFE IC
160
VCE = −10 V
120
Ta = 75°C
25°C
80 −25°C
40
0
−1
−10
−100
−1 000
Collector current IC (mA)
Cob VCB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
− 0.1 −1 −10 −100
Collector-base voltage VCB (V)
IO VIN
VIN IO
−104
VO = −5 V
−100
VO = − 0.2 V
Ta = 25°C
Ta = 25°C
−103 −10
−102
−1
−10 − 0.1
−1
− 0.4
− 0.6 − 0.8 −1.0 −1.2
Input voltage VIN (V)
−1.4
− 0.01
− 0.1
−1 −10
Output current IO (mA)
−100
SJH00001BED
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet UNR111x.PDF ] | |
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